Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines
US7371333B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Feb 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a fluid comprising H3PO4 and H2O at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch nickel silicide from the substrate. In one implementation, at least one of nickel silicide or cobalt silicide is exposed to a fluid comprising H2SO4, H2O2, H2O, and HF at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch the at least one of nickel silicide or cobalt silicide from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.