Prashant Raghu
35Patents
4h-index
35Co-inventors
59Inventor score
Filing activity: Jun 7, 2005 → Feb 5, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9653307B1 | Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures | Electricity | 17 | Active |
| US7902081B2 | Methods of etching polysilicon and methods of forming pluralities of capacitors | Electricity | 12 | Active |
| US7659560B2 | Transistor structures | Electricity | 9 | Active |
| US7713813B2 | Methods of forming capacitors | Electricity | 8 | Active |
| US8183157B2 | Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures | Emerging Cross-Sectional Technologies | 3 | Active |
| US9236427B2 | Multi-material structures and capacitor-containing semiconductor constructions | Emerging Cross-Sectional Technologies | 3 | Active |
| US8618000B2 | Selective wet etching of hafnium aluminum oxide films | Electricity | 3 | Active |
| US8962460B2 | Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same | Electricity | 3 | Active |
| US7892937B2 | Methods of forming capacitors | Emerging Cross-Sectional Technologies | 3 | Active |
| US10497558B2 | Using sacrificial polymer materials in semiconductor processing | Performing Operations; Transporting | 2 | Active |
| US8932933B2 | Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures | Electricity | 2 | Active |
| US8283258B2 | Selective wet etching of hafnium aluminum oxide films | Electricity | 2 | Active |
| US10916418B2 | Using sacrificial polymer materials in semiconductor processing | Performing Operations; Transporting | 1 | Active |
| US7867845B2 | Transistor gate forming methods and transistor structures | Electricity | 1 | Expired |
| US8865544B2 | Methods of forming capacitors | Emerging Cross-Sectional Technologies | 1 | Active |
| US7491650B2 | Etch compositions and methods of processing a substrate | Chemistry; Metallurgy | 1 | Expired |
| US9159780B2 | Methods of forming capacitors | Electricity | 1 | Active |
| US8946043B2 | Methods of forming capacitors | Electricity | 1 | Active |
| US8512587B2 | Highly selective doped oxide etchant | Chemistry; Metallurgy | 1 | Active |
| US7629266B2 | Etch compositions and methods of processing a substrate | Chemistry; Metallurgy | 0 | Active |
| US11651952B2 | Using sacrificial polymer materials in semiconductor processing | Performing Operations; Transporting | 0 | Active |
| US10607851B2 | Vapor-etch cyclic process | Electricity | 0 | Active |
| US8349687B2 | Transistor gate forming methods and transistor structures | Electricity | 0 | Active |
| US7371333B2 | Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines | Electricity | 0 | Expired |
| US9012318B2 | Etching polysilicon | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.