Integrated semiconductor circuit comprising a transistor and a strip conductor
US7372095B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Dec 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
An integrated semiconductor circuit includes a transistor and a strip conductor (11). The transistor includes a first (1) and a second source/drain region (2) and a gate electrode. The strip conductor (11) is electrically insulated from a semiconductor body at least by a gate dielectric and forms the gate electrode in the area of the transistor. The strip conductor (11) extends along a first direction (x) in the area of the transistor. The second source/drain region (2) is arranged offset with respect to the first source/drain region (1) in the first direction (x). The transistor thus formed has an inversion channel (K1) that only extends between two corner areas (1a, 2a) facing one another of the first and of the second source/drain region, i.e. is much narrower than in the case of a conventional transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.