Lithographic apparatus and device manufacturing method
US7372540B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Mar 24, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
By proper selection of illumination configuration, mask transmission, and mask bias, complex patterns of contact holes may be imaged with sufficient latitude for manufacturing at minimum half-pitches of k1=0.40 or below. In an embodiment, a method of transferring an image of a mask pattern onto a substrate with a lithographic apparatus is presented. The method includes illuminating a mask pattern of an attenuated phase shift mask with an illumination configuration including on-axis and off-axis components, the off-axis component of the illumination being an annular illumination extending near a pupil edge, and projecting an image of the illuminated mask pattern onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.