Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
US7372547B2 · kind B2 · utility
5Cited by
10References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2004 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a off axis light to reduce the effect of zero order light to improve the process window for maskless phase shift lithography systems and methodologies. A lithography system is provided. The lithography system provided uses off axis light beams projected onto a mirror array configured to generate a phase shift optical image pattern. This pattern is projected onto a photoimageable layer formed on the target substrate to facilitate pattern transfer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.