Integrated circuit having resistive memory
US7372725B2 · kind B2 · utility
29Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Mar 5, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device including a memory cell, a first circuit, and a second circuit. The memory cell includes phase-change material. The first circuit is configured to provide pulses to the phase-change material and to program each of more than two states into the memory cell. The second circuit is configured to sense the present state of the memory cell and provide signals that indicate the present state of the memory cell. The first circuit programs each of the more than two states into the memory cell based on the signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.