Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it
US7374651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2002 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Apr 8, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D3/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 μm (or more) to 20000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.