Method for growing silicon single crystal and silicon wafer
US7374741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2006 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Aug 9, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/203
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in a portion of a radial cross section of said silicon single crystal and at a pull rate which is slower than that to form an laser scattering tomography defect occurrence region, according to the Czochralski method. This silicon wafer is sampled from a straight body of the silicon single crystal grown using said method for growing a silicon single crystal, and the LPD density of LPD of 0.09 μm or greater in the surface after 10 times of repetitions of the SC-1 cleaning is 0.1/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.