Method of providing contact via to a surface
US7375027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2004 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.