Semiconductive metal oxide thin film ferroelectric memory transistor
US7378286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | May 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrication process and could realize 3D structure to increase circuit density. The disclosed semiconductive metal oxide transistor can have great potential in ferroelectric non volatile memory device with the further advantages of good interfacial properties with the ferroelectric materials, possible lattice matching with the ferroelectric layer, reducing or eliminating the oxygen diffusion problem to improve the reliability of the ferroelectric memory transistor. The semiconductive metal oxide film is preferably a metal oxide exhibiting semiconducting properties at the transistor operating conditions, for example, In2O3 or RuO2. The present invention ferroelectric transistor can be a metal-ferroelectric-semiconductive metal oxide FET having a gate stack of a top metal electrode disposed on a ferroelectric layer disposed on a semiconductive metal oxide channel on a substrate. Using additional layer of bottom electrode and gate…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.