CMOS image sensor
US7378694B2 · kind B2 · utility
10Cited by
0References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 23, 2005 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Mar 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/62
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.