Self-aligned V0-contact for cell size reduction
US7378700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2006 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM comprising. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the V0-contact until the etching is stopped by the liner layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.