Method for producing self-aligned mask, articles produced by same and composition for same
US7378738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2003 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Sep 2, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.