Patent · US Expired

Lithographic apparatus, device manufacturing methods, mask and method of characterizing a mask and/or pellicle

US7379154B2 · kind B2 · utility

5Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2004
Grant dateMay 27, 2008
Priority date
Expiry dateApr 30, 2024

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/82
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A thick pellicle is allowed to have a non-flat shape and its shape is characterized to calculate corrections to be applied in exposures to compensate for the optical effects of the pellicle. The pellicle may be mounted so as to adopt a one-dimensional shape under the influence of gravity to make the compensation easier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.