Method of forming a field effect transistor comprising a stressed channel region

US7381602B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Joerg Hohage · Dresden, DE
• Hartmut Ruelke · Dresden, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: May 9, 2005
• Grant date: Jun 3, 2008
• Expiry date: Mar 16, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined tensile intrinsic stress of about 900 MPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, tensile stress is created in the channel region. The tensile stress leads to an increase of the electron mobility in the channel region.