Method for reducing film stress for SiCOH low-k dielectric materials
US7381659B2 · kind B2 · utility
40Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Nov 22, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Feb 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing the tensile stress of a low-k dielectric layer includes depositing an organosilicate layer on a substrate, the layer having an initial tensile stress value associated therewith. The layer is annealed in a reactive environment at a temperature and for a duration selected to result in the layer having a reduced tensile stress value with respect the initial tensile stress value following the completion of the annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.