Methods for improving the cracking resistance of low-k dielectric materials
US7381662B1 · kind B1 · utility
28Cited by
76References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.