Phase-change TaN resistor based triple-state/multi-state read only memory
US7381981B2 · kind B2 · utility
16Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Nov 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.