Enhancement mode III-nitride FET
US7382001B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Apr 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.