Trench gate FETs with reduced gate to drain charge
US7382019B2 · kind B2 · utility
23Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2005 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Nov 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A field effect transistor includes a trench extending into a semiconductor region. The trench has a gate dielectric lining the trench sidewalls and a gate electrode therein. A channel region in the semiconductor region extends along a sidewall of the trench. The gate dielectric has a non-uniform thickness such that a variation in thickness of the gate dielectric along at least a lower portion of the channel region is inversely dependent on a variation in doping concentration in the at least a lower portion of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.