Insulated gate field-effect transistor having III-VI source/drain layer(s)
US7382021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Aug 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A transistor includes one or more channel taps containing a stack consisting at least in part of a semiconductor an interfacial III-VI layered compound and a conductor. The III-VI compound consists primarily of atoms from Groups IIIA-B and from Group VIA of the Periodic Table of the Elements in an approximate 1:1 ratio. These materials may be formed as layers of covalently bonded elements from Groups IIIA-B and covalently bonded Group VIA elements, adjacent and respective planes of which may be bonded by Van der Waals forces (e.g., to form a single bilayer consisting of a single plane of atoms from Groups IIIA-B and a single plane of Group VIA atoms). One particular III-VI material from which the interfacial layer is made, especially for p-channel transistors, is GaSe. Other III-VI compounds, whether pure compounds or alloys of pure compounds, may also be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.