Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation

US7384877B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Volker Kahlert · Dresden, DE
• Christof Streck · Coswig, DE
• Patrick Press · Dresden, DE

Key dates

• Filing date: May 22, 2006
• Grant date: Jun 10, 2008
• Expiry date: May 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding sputter etch process, wherein, in a particular embodiment, an additional oxidation process is performed to efficiently remove any silicon contaminations and surface impurities by a subsequent wet chemical treatment on the basis of HF, which is followed by the metal deposition.