Preventing damage to low-k materials during resist stripping
US7385287B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2007 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.