Film formation apparatus
US7387686B2 · kind B2 · utility
11Cited by
12References
9Claims
0Family size
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Key dates
| Filing date | Mar 24, 2004 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Aug 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.