CMOS imager with enhanced transfer of charge and low voltage operation and method of formation
US7387908B2 · kind B2 · utility
8Cited by
8References
56Claims
0Family size
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Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Mar 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.