Patent · US Active

Method for forming a metal structure

US7387950B1 · kind B1 · utility

19Cited by
0References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 17, 2006
Grant dateJun 17, 2008
Priority date
Expiry dateDec 17, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor wafer comprises a plurality of die areas, at least a first scribe line area and at least a second scribe line area surrounding each die area, at least a first metal structure positioned in the first scribe line area, and at least a second metal structure positioned in the second scribe line area. The first metal structure comprises at least a first slot split parallel to the first scribe line area, or comprises a plurality of openings arranged in an array. The second metal structure comprises at least a second slot split parallel to the second scribe line area, or comprises a plurality of openings arranged in an array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.