Top patterned hardmask and method for patterning
US7387969B2 · kind B2 · utility
1Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2005 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Mar 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.