Non-volatile memory cell and manufacturing method thereof
US7388250B2 · kind B2 · utility
3Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Mar 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
A non-volatile memory cell includes a substrate, a first isolation structure positioned in a first region on the substrate, a second isolation structure surrounding a second region on the substrate, a control gate positioned on the first isolation structure in the first region, a first insulating layer positioned on the control gate, a second insulating layer positioned on the portion of the substrate in the second region, and a floating gate positioned on the first insulating layer and the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.