Strained finFET CMOS device structures

US7388259B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Bruce B. Doris · Brewster, US
• Dureseti Chidambarrao · Weston, US
• Meikei Ieong · Wappingers Falls, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Nov 25, 2002
• Grant date: Jun 17, 2008
• Expiry date: Nov 25, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A semiconductor device structure, includes a PMOS device 200 and an NMOS device 300 disposed on a substrate 1,2, the PMOS device including a compressive layer 6 stressing an active region of the PMOS device, the NMOS device including a tensile layer 9 stressing an active region of the NMOS device, wherein the compressive layer includes a first dielectric material, the tensile layer includes a second dielectric material, and the PMOS and NMOS devices are FinFET devices 200, 300.