Detecting switching of access elements of phase change memory cells
US7388775B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Sep 26, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.