Spin dependent tunneling devices having reduced topological coupling
US7390584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic ferromagnetic material is provided on the opposite side with an antiparallel coupling layer thereon and a subsequent thin-film of an anisotropic ferromagnetic material on the antiparallel coupling layer with the compensation thin-film being less thick than the subsequent thin-film. A antiferromagnetic layer can be supported by the layers on either side of the intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.