Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

US7390709B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Mark L. Doczy · Beaverton, US
• Justin K. Brask · Portland, US
• Jack T. Kavalieros · Portland, US
• Uday Shah · Portland, US
• Matthew V. Metz · Portland, US
• Suman Datta · Beaverton, US
• Ramune Nagisetty · Portland, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Sep 8, 2004
• Grant date: Jun 24, 2008
• Expiry date: Oct 1, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a second part. After a first metal layer with a first workfunction is formed on the first and second parts of the second dielectric layer, part of the first metal layer is converted into a second metal layer with a second workfunction.