Patent · US Active

Methods of enhancing capacitors in integrated circuits

US7390712B2 · kind B2 · utility

2Cited by
22References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 30, 2007
Grant dateJun 24, 2008
Priority date—
Expiry dateApr 30, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/0335
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second electrode having a compound. The compound includes a first substance and a second substance. The second electrode includes a trace amount of the first substance. The morphology of the semiconductor structure remains stable when the trace amount of the first substance is oxidized during crystallization of the dielectric. In one embodiment, the crystalline structure of the dielectric describes substantially a (001) lattice plane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.