Method of correcting mask pattern
US7392503B2 · kind B2 · utility
2Cited by
6References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 20, 2005 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Oct 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of correcting a mask pattern is provided. First, an original writer drawing data of a circuit layout pattern is inputted. Then, according to the original writer drawing data, a correcting writer rule is selected by searching from a look-up table. According to the correcting writer rule, the original writer drawing data is corrected to obtain a corrected writer drawing data of the circuit layout pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.