Plasma processing method and plasma processing apparatus
US7393460B2 · kind B2 · utility
3Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Apr 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×1011 cm−3 and an oxygen radical density not higher than 1×1014 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.