Backside method for fabricating semiconductor components with conductive interconnects
US7393770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Apr 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a substrate contact on the circuit side. The method also includes the steps of forming a substrate opening from the backside to the substrate contact, and then bonding the conductive interconnect to an inner surface of the substrate contact. A system for performing the method includes the semiconductor substrate, a thinning system for thinning the semiconductor substrate, an etching system for forming the substrate opening, and a bonding system for bonding the conductive interconnect to the substrate contact. The semiconductor component can be used to form module components, underfilled components, stacked components, and image sensor semiconductor components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.