Methods and apparatus for forming rhodium-containing layers
US7393785B2 · kind B2 · utility
60Cited by
109References
20Claims
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Key dates
| Filing date | Apr 25, 2007 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Apr 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.