Methods for post-etch deposition of a dielectric film
US7393795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2006 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Feb 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.