Optical metrology using a photonic nanojet
US7394535B1 · kind B1 · utility
16Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2007 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Mar 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/0639
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An inspection area on a semiconductor wafer can be examined using a photonic nanojet. The photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. The inspection area is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.