Patent · US Active

Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress

US7396718B2 · kind B2 · utility

16Cited by

2References

9Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Kai Frohberg · Meißen, DE
Matthias Schaller · Dresden, DE
Joerg Hohage · Dresden, DE
Holger Schuehrer · Dresden, DE

Key dates

Filing date	Jun 10, 2005
Grant date	Jul 8, 2008
Priority date	—
Expiry date	Jun 20, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A technique is provided that allows the formation of contact etch stop layers having different intrinsic stress for different transistors, while substantially avoiding any device degradation owing to the partial removal of the contact etch stop layer. Hereby, an additional thin etch stop layer is provided prior to the formation of the contact etch stop layers, thereby substantially maintaining the integrity of metal silicide regions, when a portion of an initially deposited contact etch stop layer is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.