Technique for boron implantation
US7397048B2 · kind B2 · utility
17Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.