Optical proximity correction method utilizing phase-edges as sub-resolution assist features
US7399559B2 · kind B2 · utility
3Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Sep 6, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.