Magnetic devices and techniques for formation thereof
US7399646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Aug 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.