In situ application of etch back for improved deposition into high-aspect-ratio features
US7399707B2 · kind B2 · utility
2Cited by
57References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jul 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.