Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7399943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jul 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.