Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
US7400027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.