Patent · US Active

Intergrated circuit for programming resistive memory cells

US7400528B2 · kind B2 · utility

6Cited by

2References

20Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Thomas Happ · Tarrytown, US
Michael Kund · Bad Aibling, DE

Key dates

Filing date	Sep 5, 2006
Grant date	Jul 15, 2008
Priority date	—
Expiry date	Jan 10, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/3495
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Methods and devices for programming conductive bridging RAM (CBRAM) memory cells improve the cycle stability by ensuring that the memory cells are erased before being written to anew. Optionally, in the event of overwriting the memory cells, memory cells may be written to only when the writing operation would alter the cell content (i.e., the state of bit stored in the memory cell is being changed from a logical 0 to a logical 1 or vice versa).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.