Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
US7402257B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jul 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.