Method of forming self-passivating interconnects and resulting devices
US7402509B2 · kind B2 · utility
2Cited by
0References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jan 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming self-passivating interconnects. At least one of two mating bond structures is formed, at least in part, from an alloy of a first metal and a second metal (or other element). The second metal is capable of migrating through the first metal to free surfaces of the mating bond structures. During bonding, the two mating bond structures are bonded together to form an interconnect, and the second metal segregates to free surfaces of this interconnect to form a passivation layer. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.