Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer
US7402514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2003 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jan 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the instant invention is a method of providing a connection between a first conductor and a second conductor wherein the first conductor is situated under the second conductor and separated by a first insulating layer, the method comprising the steps of: forming an opening in the first insulating layer (layer 124 or 128 of FIGS. 1-4), the opening having a top, a bottom and sidewalls and is situated between the first conductor and the second conductor; forming a second insulating layer (layer 134, 138, and 142 of FIGS. 3 and 4) exclusively on the sidewalls of the opening thereby leaving a smaller opening in the first insulating layer; forming a conductive material (material 140 of FIGS. 3 and 4) in the smaller opening; and wherein the first insulating layer is comprised of a low-k material and the second insulating layer is comprised of an insulator which has electrical leakage properties which are less than the electrical leakage properties of the first insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.